SICFET N-CH 700V 35A TO247-3

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SICFET N-CH 700V 35A TO247-3

Name	Value
Mfr	Microsemi Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Operating Temperature	-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs	145mOhm @ 10A, 20V
Power Dissipation (Max)	176W (Tc)
Supplier Device Package	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Drain to Source Voltage (Vdss)	700 V
Input Capacitance (Ciss) (Max) @ Vds	1035 pF @ 700 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)