MOSFET P-CH 30V 1.1A UFM

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MOSFET P-CH 30V 1.1A UFM

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	1.8V @ 100µA
Base Product Number	SSM3J112
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	390mOhm @ 500mA, 10V
Power Dissipation (Max)	800mW (Ta)
Supplier Device Package	UFM
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	86 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)