MOSFET N-CH 900V 1.7A I2PAK

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MOSFET N-CH 900V 1.7A I2PAK

Name	Value
Mfr	Vishay Siliconix
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	IRFBF20
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	8Ohm @ 1A, 10V
Power Dissipation (Max)	3.1W (Ta), 54W (Tc)
Supplier Device Package	I2PAK
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Drain to Source Voltage (Vdss)	900 V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)