MOSFET N-CH 34V 2A UFM

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MOSFET N-CH 34V 2A UFM

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIV
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	1.7V @ 1mA
Base Product Number	SSM3H137
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	240mOhm @ 1A, 10V
Power Dissipation (Max)	800mW (Ta)
Supplier Device Package	UFM
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Drain to Source Voltage (Vdss)	34 V
Input Capacitance (Ciss) (Max) @ Vds	119 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)