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DIODE SIL CARB 650V 10A TO220F

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DIODE SIL CARB 650V 10A TO220F
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DIODE SIL CARB 650V 10A TO220F

NameValue
MfrWeEn Semiconductors
SpeedNo Recovery Time > 500mA (Io)
Series-
PackageBulk
Diode TypeSilicon Carbide Schottky
Mounting TypeThrough Hole
Package / CaseTO-220-2 Full Pack, Isolated Tab
Product StatusActive
Base Product NumberNXPSC
Capacitance @ Vr, F300pF @ 1V, 1MHz
Supplier Device PackageTO-220F
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr250 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)10A
Operating Temperature - Junction175°C(Max)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A