
DIODE SIL CARB 650V 10A TO220F
Name | Value |
---|---|
Mfr | WeEn Semiconductors |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Bulk |
Diode Type | Silicon Carbide Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 Full Pack, Isolated Tab |
Product Status | Active |
Base Product Number | NXPSC |
Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
Supplier Device Package | TO-220F |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A |
Operating Temperature - Junction | 175°C(Max) |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |