SICFET N-CH 1200V 600A MODULE

$1,440.00

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SICFET N-CH 1200V 600A MODULE

Name	Value
Mfr	Rohm Semiconductor
Series	-
Package	Tray
FET Type	N-Channel
Vgs (Max)	+22V, -4V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 182mA
Base Product Number	BSM600
Operating Temperature	175°C(TJ)
Rds On (Max) @ Id, Vgs	-
Power Dissipation (Max)	2460W (Tc)
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	-
Current - Continuous Drain (Id) @ 25°C	600A (Tc)