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DIODE SIL CARB 650V 8A TO220-2L

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DIODE SIL CARB 650V 8A TO220-2L
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DIODE SIL CARB 650V 8A TO220-2L

NameValue
MfrToshiba Semiconductor and Storage
SpeedNo Recovery Time > 500mA (Io)
Series-
PackageTube
Diode TypeSilicon Carbide Schottky
Mounting TypeThrough Hole
Package / CaseTO-220-2
Product StatusActive
Base Product NumberTRS8E65
Capacitance @ Vr, F28pF @ 650V, 1MHz
Supplier Device PackageTO-220-2L
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr40 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)8A
Operating Temperature - Junction175°C(Max)
Voltage - Forward (Vf) (Max) @ If1.6 V @ 8 A